ZHANG Hongkai, WANG Lixin, CHEN Runze, GUO Min. BiCMOS over temperature protection circuit with low process drift based on current difference[J]. Microelectronics & Computer, 2021, 38(7): 7-12.
Citation: ZHANG Hongkai, WANG Lixin, CHEN Runze, GUO Min. BiCMOS over temperature protection circuit with low process drift based on current difference[J]. Microelectronics & Computer, 2021, 38(7): 7-12.

BiCMOS over temperature protection circuit with low process drift based on current difference

  • Over-temperature protection(OTP) circuit is an important function module in power integrated circuit.An OTP circuit based on current difference is designedin this paper. Based on the XFAB 0.6μm BCD process, the over-temperature protection circuit is simulated under more than 100 process corners. The simulation results show that the fluctuation of over temperature turn-off and restart threshold points are both reduced by more than 50%, compared with the conventional over temperature protection circuit with voltage structure, indicating that the proposed OTP circuit has the characteristics of low process drift.
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