A Design of Sense Amplifier for Flash Memory
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Abstract
A new high-speed low-supply voltage sense amplifier, which is composed of a new bit-line voltage regulator and a folded cascode ampligier circuit, is presented. It has been verified that the read speed of the new sense amplifier is fast in temperature range from 一40℃ to 15O℃ by simulation with 0.13μm CMOS models. Simulation results showed a read time of 17ns for the worst case, 10ns for the best case, 12.5ns and the normal temperature/1.2V case, respectively.
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